Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16515283Application Date: 2019-07-18
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Publication No.: US10886413B2Publication Date: 2021-01-05
- Inventor: Takahiro Sato , Yasutaka Nakazawa , Takayuki Cho , Shunsuke Koshioka , Hajime Tokunaga , Masami Jintyou
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2012-251794 20121116
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/10 ; H01L21/02 ; H01L21/465 ; G02F1/1362 ; G02F1/1368 ; H01L27/12 ; H01L27/32 ; H01L29/04 ; H01L29/06 ; H01L29/24 ; H01L29/423 ; H01L21/306 ; H01L29/66
Abstract:
A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.
Public/Granted literature
- US20190341502A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-11-07
Information query
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