- Patent Title: Semiconductor laser and method for producing a semiconductor laser
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Application No.: US16711186Application Date: 2019-12-11
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Publication No.: US10886704B2Publication Date: 2021-01-05
- Inventor: Frank Singer , Norwin Von Malm , Tilman Ruegheimer , Thomas Kippes
- Applicant: OSRAM OLED GMBH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OLED GMBH
- Current Assignee: OSRAM OLED GMBH
- Current Assignee Address: DE Regensburg
- Agency: MH2 Technology Law Group LLP
- Priority: DE102015116970 20151006
- Main IPC: H01S5/227
- IPC: H01S5/227 ; H01S5/02 ; H01S5/022 ; H01S5/042 ; H01L23/00 ; H01S5/024 ; H01S5/323 ; H01S5/22 ; H01L21/56

Abstract:
In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).
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