Invention Grant
- Patent Title: Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device
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Application No.: US15620861Application Date: 2017-06-13
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Publication No.: US10886909B2Publication Date: 2021-01-05
- Inventor: Roman Baburske , Johannes Georg Laven , Thomas Basler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016111127 20160617
- Main IPC: H03K17/00
- IPC: H03K17/00 ; H03K17/082 ; H03K17/28 ; H01L27/088 ; H01L21/82 ; H01L29/08 ; H01L27/06 ; H01L29/06 ; H01L29/10 ; H01L29/16 ; H01L29/739 ; H01L29/78 ; H01L29/808 ; H01L21/8234 ; H01L29/04

Abstract:
An electric assembly includes an insulated gate bipolar transistor device, a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and a control circuit. The control circuit is electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device. The control circuit is configured to turn on the bipolar transistor device and to turn on the wide-bandgap transistor device at a predefined turn-on delay with respect to a turn-on of the bipolar transistor device.
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