Invention Grant
- Patent Title: Image sensor with reduced noise
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Application No.: US16115987Application Date: 2018-08-29
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Publication No.: US10887536B2Publication Date: 2021-01-05
- Inventor: Jung Wook Lim , Eun Sub Shim , Kyung Ho Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0004618 20180112
- Main IPC: H04N5/225
- IPC: H04N5/225 ; H04N5/357 ; H01L27/146 ; H04N5/355 ; H04N5/378

Abstract:
An image sensor includes a photoelectric conversion unit configured to receive light to generate an electric charge and provide the electric charge to a first node, a transfer transistor configured to provide a voltage level of the first node to a floating diffusion node in response to a first signal, a booster configured to increase a voltage level of the floating diffusion node in response to a second signal, a source follower transistor configured to provide the voltage level of the floating diffusion node to a second node, and a selection transistor configured to provide a voltage level of the second node to a pixel output terminal in response to a third signal. After the selection transistor is turned on, the booster is enabled, and before the transfer transistor is turned on, the booster is disabled.
Public/Granted literature
- US20190222781A1 IMAGE SENSOR WITH REDUCED NOISE Public/Granted day:2019-07-18
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