Invention Grant
- Patent Title: Fast imprint lithography
-
Application No.: US16046272Application Date: 2018-07-26
-
Publication No.: US10890843B2Publication Date: 2021-01-12
- Inventor: Hoyoung Kang
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; H01L21/302 ; H01L21/027

Abstract:
Methods and systems for imprint lithography are described. In an embodiment, a method may include receiving a substrate in an imprint lithography chamber. Such a method may also include applying a deformable layer to a surface of the substrate. The method may further include injecting a gas that dissolves into the deformable layer more quickly than air into the chamber. Additionally, the method may include pressing a mold into the deformable layer. The method may also include controlling one or more processing parameters in order to achieve device formation objectives.
Public/Granted literature
- US20190033711A1 Fast Imprint Lithography Public/Granted day:2019-01-31
Information query