Invention Grant
- Patent Title: Memory controller and method of accessing flash memory
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Application No.: US16835939Application Date: 2020-03-31
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Publication No.: US10892776B1Publication Date: 2021-01-12
- Inventor: Shiuan-Hao Kuo
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Jhubei
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW109101189A 20200114
- Main IPC: H03M13/11
- IPC: H03M13/11 ; G06F11/10

Abstract:
A memory controller for use in a data storage device is provided. A low-density parity check (LDPC) process performed by the memory controller includes an initial phase, a decoding phase, and an output phase. The memory controller includes a variable-node circuit and a check-node circuit. During each LDPC decoding iterative operation in the decoding phase: the check-node circuit obtains a codeword difference from the variable-node circuit, and calculates a syndrome according to the codeword difference. The variable-node circuit is configured to: determine a syndrome weight according to the syndrome from the check-node circuit; obtain a previous codeword from a variable-node memory without obtaining a channel value from a channel-value memory; perform bit-flipping on one or more codeword bits in the previous codeword according to the calculated syndrome weight to generate an updated codeword; and subtract the previous codeword from the updated codeword to obtain the codeword difference.
Information query
IPC分类: