Invention Grant
- Patent Title: Fullerene derivative and n-type semiconductor material
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Application No.: US15766148Application Date: 2016-10-06
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Publication No.: US10894770B2Publication Date: 2021-01-19
- Inventor: Takabumi Nagai , Kenji Adachi , Yoshio Aso , Yutaka Ie , Makoto Karakawa
- Applicant: DAIKIN INDUSTRIES, LTD. , OSAKA UNIVERSITY
- Applicant Address: JP Osaka; JP Osaka
- Assignee: DAIKIN INDUSTRIES, LTD.,OSAKA UNIVERSITY
- Current Assignee: DAIKIN INDUSTRIES, LTD.,OSAKA UNIVERSITY
- Current Assignee Address: JP Osaka; JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2015-198877 20151006
- International Application: PCT/JP2016/079795 WO 20161006
- International Announcement: WO2017/061543 WO 20170413
- Main IPC: C07D209/52
- IPC: C07D209/52 ; C01B32/154 ; H01L31/0216 ; H01L51/00 ; H01L51/42 ; H01L51/44

Abstract:
An object of the present invention is to provide a novel fullerene derivative usable in n-type semiconductor materials for organic thin-film solar cells and the like. The object is achieved by a fullerene derivative represented by formula (1) wherein R1 represents aryl optionally substituted with at least one substituent, R2 represents an organic group, R3 represents an organic group, with the proviso that at least one of R2 and R3 is alkyl optionally substituted with at least one substituent or alkyl ether optionally substituted with at least one substituent, R4 represents hydrogen or an organic group, and a ring A represents a fullerene ring.
Public/Granted literature
- US20180282274A1 FULLERENE DERIVATIVE AND n-TYPE SEMICONDUCTOR MATERIAL Public/Granted day:2018-10-04
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