Invention Grant
- Patent Title: Semiconductor devices having discretely located passivation material, and associated systems and methods
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Application No.: US16276533Application Date: 2019-02-14
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Publication No.: US10896886B2Publication Date: 2021-01-19
- Inventor: Mayukhee Das , Jonathan S. Hacker , Christopher J. Gambee , Chandra S. Tiwari
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/66 ; H01L25/065
Abstract:
Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.
Public/Granted literature
- US20190189576A1 SEMICONDUCTOR DEVICES HAVING DISCRETELY LOCATED PASSIVATION MATERIAL, AND ASSOCIATED SYSTEMS AND METHODS Public/Granted day:2019-06-20
Information query
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