公开(公告)号：US20190189576A1

公开(公告)日：2019-06-20

申请号：US16276533

申请日：2019-02-14

Applicant: Micron Technology, Inc.

Inventor： Mayukhee Das ,  Jonathan S. Hacker ,  Christopher J. Gambee ,  Chandra S. Tiwari

IPC: H01L23/00 ,  H01L21/66 ,  H01L25/065

CPC classification number: H01L24/05 ,  H01L22/32 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/03011 ,  H01L2224/0345 ,  H01L2224/03921 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/13021 ,  H01L2224/13026 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/01074

Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.

公开(公告)号：US10262961B2

公开(公告)日：2019-04-16

申请号：US15982129

申请日：2018-05-17

Applicant: Micron Technology, Inc.

Inventor： Mayukhee Das ,  Jonathan S. Hacker ,  Christopher J. Gambee ,  Chandra S. Tiwari

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/66

Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.

公开(公告)号：US20190051623A1

公开(公告)日：2019-02-14

申请号：US15982129

申请日：2018-05-17

Applicant: Micron Technology, Inc.

Inventor： Mayukhee Das ,  Jonathan S. Hacker ,  Christopher J. Gambee ,  Chandra S. Tiwari

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/66

Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.

公开(公告)号：US10896886B2

公开(公告)日：2021-01-19

申请号：US16276533

申请日：2019-02-14

Applicant: Micron Technology, Inc.

Inventor： Mayukhee Das ,  Jonathan S. Hacker ,  Christopher J. Gambee ,  Chandra S. Tiwari

IPC: H01L23/00 ,  H01L21/66 ,  H01L25/065

Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad.

公开(公告)号：US10002840B1

公开(公告)日：2018-06-19

申请号：US15672006

申请日：2017-08-08

Applicant: Micron Technology, Inc.

Inventor： Mayukhee Das ,  Jonathan S. Hacker ,  Christopher J. Gambee ,  Chandra S. Tiwari

IPC: H01L23/00 ,  H01L21/66 ,  H01L25/065

CPC classification number: H01L24/05 ,  H01L22/32 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0657 ,  H01L2224/03011 ,  H01L2224/0345 ,  H01L2224/03921 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/13021 ,  H01L2224/13026 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/01074

Abstract: Semiconductor devices having discretely located passivation material are disclosed herein. In one embodiment, a semiconductor device assembly can include a bond pad having a bonding surface with a process artifact. A passivation material can be positioned to at least partially fill a portion of the process artifact. A conductive structure can be positioned to extend across the bonding surface of the bond pad, and a conductive interconnect can extend from the conductive structure.