Invention Grant
- Patent Title: Graphene field effect transistors for detection of ions
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Application No.: US16356019Application Date: 2019-03-18
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Publication No.: US10900927B2Publication Date: 2021-01-26
- Inventor: Kenneth Walsh , Goutam Koley , Md. Sayful Islam , Hongmei Li
- Applicant: UNIVERSITY OF SOUTH CAROLINA , CLEMSON UNIVERSITY
- Applicant Address: US SC Columbia; US SC Clemson
- Assignee: UNIVERSITY OF SOUTH CAROLINA,CLEMSON UNIVERSITY
- Current Assignee: UNIVERSITY OF SOUTH CAROLINA,CLEMSON UNIVERSITY
- Current Assignee Address: US SC Columbia; US SC Clemson
- Agency: Dority & Manning, P.A.
- Main IPC: G01N27/414
- IPC: G01N27/414 ; G01N27/333 ; G01N27/30 ; H01L29/16
Abstract:
A graphene-based ion sensitive field effect transistor (GISFET) with high sensitivity and selectivity for ions is provided. For example, the GISFET of the present invention can exhibit high sensitivity and selectivity for K+ ions has been demonstrated utilizing a valinomycin-based ion selective membrane. The sensitivity of the GISFET can be at least about 50 millivolts/decade and can be stable for a time period of about two months, indicating the GISFET's reliability and effectiveness for physiological monitoring.
Public/Granted literature
- US20190293595A1 Graphene Field Effect Transistors for Detection of Ions Public/Granted day:2019-09-26
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