Invention Grant
- Patent Title: Filling empty structures with deposition under high-energy SEM for uniform DE layering
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Application No.: US16789348Application Date: 2020-02-12
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Publication No.: US10903044B1Publication Date: 2021-01-26
- Inventor: Alon Litman , Konstantin Chirko , Yehuda Zur
- Applicant: APPLIED MATERIALS ISRAEL LTD.
- Applicant Address: IL Rehovot
- Assignee: APPLIED MATERIALS ISRAEL LTD.
- Current Assignee: APPLIED MATERIALS ISRAEL LTD.
- Current Assignee Address: IL Rehovot
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01J37/28
- IPC: H01J37/28 ; H01L27/108 ; H01L27/11556 ; H01L27/11582

Abstract:
A method of evaluating a region of a sample that includes an array of holes separated by solid portions. The method includes positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB); injecting a deposition gas onto the sample; scanning, with a first charged particle beam, a portion of the sample that includes a plurality of holes in the array of holes to locally deposit material within the plurality of holes in the scanned portion from the deposition gas; and milling, with the FIB column, the portion of the sample that includes the plurality of holes in which the material was locally deposited.
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