Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16246538Application Date: 2019-01-13
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Publication No.: US10903326B2Publication Date: 2021-01-26
- Inventor: Chun-Sung Huang , Shen-De Wang , Chia-Ching Hsu , Wang Xiang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/792 ; H01L29/40

Abstract:
A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; forming a second gate structure on the substrate and on one side of the first gate structure; forming a third gate structure on the substrate and on another side of the first gate structure; forming source/drain regions adjacent to the second gate structure and the third gate structure; and forming contact plugs to contact the first gate structure, the second gate structure, the third gate structure, and the source/drain regions.
Public/Granted literature
- US20200227531A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-07-16
Information query
IPC分类: