An electronic power device formed by a plurality of FETs formed on a circuit board formed of a plurality of layers, the plurality of transistors being formed on a first surface of the circuit board, the plurality of layers including a plurality of gate drive layers, a plurality of gate return layers, and a plurality of power layers. A gate drive circuit is formed on a second surface of the circuit board, the second surface being opposite the first surface, the gate drive circuit being connected to the gate and source of each of the plurality of transistors through the plurality of gate drive layers and the plurality of gate return layers. A voltage supply is connected to the drain of each of the plurality of transistors, the connections of the voltage supply to each of the plurality of transistors being interleaved through the plurality of power layers.