- 专利标题： Thin film transistor having light shielding layer
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申请号： US16330292申请日： 2018-05-15
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公开(公告)号： US10910497B2公开(公告)日： 2021-02-02
- 发明人: Xuefei Sun
- 申请人： BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Beijing
- 专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址： CN Beijing
- 代理机构： Armstrong Teasdale LLP
- 优先权： CN201710467529 20170619
- 国际申请： PCT/CN2018/086811 WO 20180515
- 国际公布： WO2018/233405 WO 20181227
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L21/00 ; H01L29/786 ; H01L29/66 ; H01L27/32 ; H01L29/49
摘要：
The embodiment of the invention discloses a thin film transistor, a method for manufacturing the same, an array substrate thereof and a display panel thereof, wherein the thin film transistor includes: a light shielding layer, wherein the light shielding layer includes a first layer for preventing light from a backlight source from entering a channel region of an active layer and a second layer for preventing light from an interlayer light source from entering the channel region of the active layer. The present invention is provided with the light shielding layer, which not only prevents the backlight from entering the channel region of the active layer, but also prevents the interlayer light from entering the channel region of the active layer, thereby reducing the adverse effect of the light source on the active layer and thus improving the quality of the thin film transistor.
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