Invention Grant
- Patent Title: Boosted high-speed level shifter
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Application No.: US16517000Application Date: 2019-07-19
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Publication No.: US10911049B2Publication Date: 2021-02-02
- Inventor: Mingdong Cui , Hari Giduturi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H03K17/10
- IPC: H03K17/10 ; H03K19/0185 ; H03K5/003 ; H03K5/00

Abstract:
Methods, systems, and devices for shifting voltage levels of electrical signals and more specifically for boosted high-speed level shifting are described. A boosted level shifter may include a driver circuit that generates a drive signal having a greater voltage swing than an input signal, and the drive signal may drive the gate of a pull-up transistor within the boosted level shifter. The lower bound of the drive signal may in some cases be a negative voltage. Driving the pull-up transistor with a drive signal having a greater voltage swing than the input signal may improve the operational speed and current-sourcing capability of the pull-up transistor, which may provide speed and efficiency benefits.
Public/Granted literature
- US20190341919A1 BOOSTED HIGH-SPEED LEVEL SHIFTER Public/Granted day:2019-11-07
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