发明授权
- 专利标题： Thin-film transistor and method of forming an electrode of a thin-film transistor
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申请号： US15895172申请日： 2018-02-13
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公开(公告)号： US10916569B2公开(公告)日： 2021-02-09
- 发明人: Shuwei Sun , Francois-Charles Dary , Marc Abouaf , Patrick Hogan , Qi Zhang
- 申请人： Shuwei Sun , Francois-Charles Dary , Marc Abouaf , Patrick Hogan , Qi Zhang
- 申请人地址： US MA Framingham; US MA Newton; US MA Harvard; US MA Somerville; US MA Wellesley
- 专利权人： Shuwei Sun,Francois-Charles Dary,Marc Abouaf,Patrick Hogan,Qi Zhang
- 当前专利权人： Shuwei Sun,Francois-Charles Dary,Marc Abouaf,Patrick Hogan,Qi Zhang
- 当前专利权人地址： US MA Framingham; US MA Newton; US MA Harvard; US MA Somerville; US MA Wellesley
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： B32B15/01
- IPC分类号： B32B15/01 ; H01B1/02 ; H01L27/12 ; H01L29/66 ; H01L29/49 ; H01L29/786 ; H01L23/532 ; C21D9/00 ; C21D1/00 ; C22F1/08 ; C22F1/00 ; C22F1/14 ; C22F1/04 ; B81C1/00 ; G06F3/044 ; G06F3/041 ; C23C30/00 ; B32B17/06 ; B32B15/04 ; B32B15/20 ; C23C28/02 ; C23C28/00 ; B32B15/02 ; B32B15/18 ; C03C17/40 ; C03C17/36
摘要：
In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.
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