Invention Grant
- Patent Title: Multi-cell structure for non-volatile resistive memory
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Application No.: US15136872Application Date: 2016-04-22
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Publication No.: US10929026B2Publication Date: 2021-02-23
- Inventor: Dimin Niu , Mu-Tien Chang , Hongzhong Zheng
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Renaissance IP Law Group LLP
- Main IPC: G06F12/1009
- IPC: G06F12/1009 ; G06F12/02 ; G06F3/06 ; G11C13/00 ; G11C8/06

Abstract:
A non-volatile memory comprises an array of a plurality of non-volatile memory cells, a controller coupled to the array, and an evaluator coupled to an output of the array. In a first operational mode, the controller receives a logical address and selects one non-volatile memory cell for access. In a second operational mode, and the controller receives a logical address and selects N non-volatile memory cells for access in which N is an integer greater than 1. If the logical address is for a read access, in the first operational mode the evaluator is disabled and the read-address output of the array corresponds to one selected non-volatile memory cell, and in the second operational mode the evaluator determines an read-address output corresponding to the received logical address based on a read output of the N selected non-volatile memory cells.
Public/Granted literature
- US20170242595A1 MULTI-CELL STRUCTURE FOR NON-VOLATILE RESISTIVE MEMORY Public/Granted day:2017-08-24
Information query
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