Invention Grant
- Patent Title: Nitrogen-doping porous graphene material in supercapacitor and production method thereof
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Application No.: US16283833Application Date: 2019-02-25
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Publication No.: US10930441B2Publication Date: 2021-02-23
- Inventor: Chien-Liang Chang , Wu-Ching Hung , Jeng-Kuei Chang , Bo-Rui Pan
- Applicant: National Chung-Shan Institute of Science and Technology
- Applicant Address: TW Taoyuan
- Assignee: National Chung-Shan Institute of Science and Technology
- Current Assignee: National Chung-Shan Institute of Science and Technology
- Current Assignee Address: TW Taoyuan
- Agent Winston Hsu
- Main IPC: H01G9/035
- IPC: H01G9/035 ; H01G9/042 ; C01B32/194

Abstract:
In this patent, a high energy and power density supercapacitor was invented. A coin cell with supercapacitor includes a spring lamination, a working electrode, a counter electrode, a separator, and an Organic electrolyte. The working and counter electrodes were Activated carbon/N-doping porous graphene/binder coated on Aluminum substrate. The separator was from Nippon Kodoshi Corporation. The Organic electrolyte was 1M TEABF4/PC. The method of producing N-doping porous graphene included the following steps: Step 1: Graphite oxide (GO) was transferred into the furnace. Step 2: Inject 50 c.c./min gas flow of Nitrous oxides for one hour. Step 3: Intensify 40 Celsius degrees/min to 900 Celsius degrees and after holding for one hour, lower the temperature naturally to the room temperature, it can be prepared into N-doping porous graphene. In this patent, the capacitance of the supercapacitor is 122 F/g and the power density is 31 kW/Kg.
Public/Granted literature
- US20200273626A1 Nitrogen-Doping Porous Graphene Material in Supercapacitor and Production Method Thereof Public/Granted day:2020-08-27
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