公开(公告)号：US12084388B2

公开(公告)日：2024-09-10

申请号：US18096568

申请日：2023-01-13

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Chih-Hsing Wang ,  Cheng-Jung Ko ,  Chuen-Ming Gee ,  Chih-Wei Kuo ,  Hsueh-I Chen ,  Jun-Bin Huang ,  Ying-Tsung Chao

IPC分类号： C04B35/56 ,  C01B32/21 ,  C04B35/626 ,  C04B35/634 ,  C04B35/64 ,  C04B35/645 ,  C30B23/00 ,  C30B35/00

CPC分类号： C04B35/5607 ,  C01B32/21 ,  C04B35/6264 ,  C04B35/63416 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/63444 ,  C04B35/645 ,  C04B2235/3839 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/661 ,  C30B23/00 ,  C30B35/002

摘要： A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

公开(公告)号：US20240234538A9

公开(公告)日：2024-07-11

申请号：US18097074

申请日：2023-01-13

申请人： National Yang Ming Chiao Tung University ,  National Chung-Shan Institute of Science and Technology

发明人： Edward Yi CHANG ,  You-Chen WENG ,  Min-Lu Kao

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7786

摘要： A high electron mobility transistor and a method for fabricating the same is disclosed. Firstly, a lattice matching layer, a channel layer, and an AlGaN layer are sequentially formed on a growth substrate. The AlGaN layer includes a first area, a second area, and a third area, wherein the second area is located between the first area and the third area. Then, an insulation block is formed on the second area of the AlGaN layer and two GaN blocks are respectively formed on the first area and the third area of the AlGaN layer. Two InAlGaN blocks are respectively formed on the GaN blocks and the insulation block is removed. Finally, a gate is formed to interfere the second area of the AlGaN layer and a source and a drain are respectively formed on the InAlGaN blocks.

公开(公告)号：US20240217386A1

公开(公告)日：2024-07-04

申请号：US18090518

申请日：2022-12-29

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： DAO-QIN LIN ,  CHI-SHENG WU ,  SHIH-CHANG TSENG ,  CHIH-HSIEN CHUNG ,  GWO-HUEI YOU ,  KUO-KUANG JEN

IPC分类号： B60L58/12 ,  B60L58/16 ,  G05B15/02 ,  H01M10/48

CPC分类号： B60L58/12 ,  B60L58/16 ,  G05B15/02 ,  H01M10/48 ,  H01M2010/4278

摘要： A method of hybrid battery electrical energy output distribution control for an electric vehicle. The method has steps comprising: (A) providing battery data of a high energy density battery and a high power density battery; (B) setting a boundary condition comprising (a) the highest and lowest boundary values of the state of health (SOH) of the batteries, (b) the highest and lowest boundary values of the state of charge (SOC) of the batteries, (c) the highest and lowest boundary values of the charge and discharge rate (C-rate) of the high energy density battery; (C) setting an energy consumption objective function; (D) using a global search algorithm to search and calculate the minimum equivalent energy consumption value under various driving conditions to establish a minimum equivalent energy consumption multi-dimensional table to achieve the output of minimum energy consumption under different driving conditions.

公开(公告)号：US20240191388A1

公开(公告)日：2024-06-13

申请号：US18531721

申请日：2023-12-07

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： CHUN-HSIANG KAO ,  YI-CHERNG FERNG ,  YING-SUN HUANG ,  KUO-KUANG JEN ,  SHUN-YI JIAN ,  CHIA-YU LEE ,  JUNG-CHOU HUNG ,  PO-JEN YANG

IPC分类号： C25F3/22 ,  B01J19/10 ,  B24C1/08

CPC分类号： C25F3/22 ,  B01J19/10 ,  B24C1/08

摘要： An electrolytic polishing treatment method for a nickel-based alloy workpiece made by lamination manufacturing comprises the following steps. Step (A) comprises performing a sandblasting treatment on the nickel-based alloy workpiece, followed by ultrasonic oscillation of the sandblasted nickel-based alloy workpiece in an oxalic acid solution. Step (B) comprises placing the nickel-based alloy workpiece in an electrolyte solution containing methanol, sulfuric acid, and perchloric acid and performing electrolytic polishing on the nickel-based alloy workpiece at a constant voltage after step (A). The processes of oxalic acid activation and electrolytic polishing are used to avoid the problems of residual stress and processing directionality caused by conventional mechanical processing and make the surface properties of the entire workpiece uniform.

公开(公告)号：US20230235431A1

公开(公告)日：2023-07-27

申请号：US17583234

申请日：2022-01-25

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： YEN-CHUNG CHEN ,  KER-JER HUANG ,  CHUEN-MING GEE ,  WEI-TING HSU

IPC分类号： C22C29/06 ,  C22F1/00

CPC分类号： C22C29/067 ,  C22C29/062 ,  C22F1/00

摘要： The present invention provides a preparation method of a light metal/boron carbide composite material, comprising: (A) providing a boron carbide precursor and a light metal powder to perform a pretreatment mixing process to form a precursor; (B) performing a vacuum hot pressing molding or a vacuum cold isostatic pressing molding on the precursor to make the precursor form a light metal/boron carbide compound green body that is uniform; (C) performing a thermal treatment on the light metal/boron carbide compound green body to make the light metal/boron carbide compound green body form a light metal/boron carbide compound sintered body; and (D) performing a cold rolling treatment or a hot rolling treatment on the light metal/boron carbide compound sintered body to obtain a light metal/boron carbide composite material.

公开(公告)号：US20230203674A1

公开(公告)日：2023-06-29

申请号：US17560303

申请日：2021-12-23

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： JIAN-LONG RUAN ,  YANG-KUAO KUO

IPC分类号： C25B1/01 ,  B22F9/14 ,  C25B9/65 ,  C25B1/50

CPC分类号： C25B1/01 ,  B22F9/14 ,  C25B9/65 ,  C25B1/50 ,  B22F2304/10 ,  B22F2302/253

摘要： Provides a method for producing aluminum oxide powder by electrochemical dissolving aluminum salt, comprise: (A) providing an electrochemical device with an aluminum material as an anode and an acidic solution as an electrolyte; (B) accelerating the dissolution of the aluminum material by current pulse method to form an acidic aluminum salt solution; (C) neutralizing the acidic aluminum salt solution with a basic solution to form an aluminum hydroxide sol; (D) adding an additive in the aluminum hydroxide sol, filtering the aluminum hydroxide sol and drying to obtain aluminum hydroxide powder; (E) roasting the aluminum hydroxide powder to form micron scale γ-aluminum oxide powder. Combines the acidic aluminum salt method and the electrochemical dissolution method to improve the dissolving rate of the aluminum material and increase the output efficiency of the acidic aluminum salt, and obtaining micron scale γ-aluminum oxide powder.

公开(公告)号：US20220251725A1

公开(公告)日：2022-08-11

申请号：US17170896

申请日：2021-02-09

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： CHIH-WEI KUO ,  CHENG-JUNG KO ,  HSUEH-I CHEN ,  JUN-BIN HUANG ,  YING-TSUNG CHAO ,  CHIA-HUNG TAI

IPC分类号： C30B23/02 ,  C30B29/36 ,  C23C14/06 ,  C23C14/24

摘要： A method of growing on-axis silicon carbide single crystal includes the steps of (A) sieving a silicon carbide source material by size, and only the part that has a size larger than 1 cm is adopted for use as a sieved silicon carbide source material; (B) filling the sieved silicon carbide source material in the bottom of a graphite crucible; (C) positioning an on-axis silicon carbide on a top of the graphite crucible to serve as a seed crystal; (D) placing the graphite crucible having the sieved silicon carbide source material and the seed crystal received therein in an induction furnace for the physical vapor transport process; (E) starting a silicon carbide crystal growth process; and (F) obtaining a silicon carbide single crystal.

公开(公告)号：US20220205128A1

公开(公告)日：2022-06-30

申请号：US17562032

申请日：2021-12-27

申请人： NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： CHUN-HSIANG KAO ,  YI-CHERNG FERNG ,  KUO-KUANG JEN ,  SHUN-YI JIAN ,  MING-HSIEN LIN ,  YU-CHIH TZENG ,  CHIA-YU LEE

IPC分类号： C25F3/24

摘要： Provides an electropolishing treatment method for a stainless steel workpiece, wherein the method comprises the following steps: placing the stainless steel workpiece in an oxalic acid solution and performing supersonic oscillation; performing a first electropolishing treatment to the stainless steel workpiece, wherein the first electropolishing treatment uses the stainless steel workpiece as an anode and 10% to 15% perchloric acid as an electrolyte, and when a constant voltage is set as 12V, the first electropolishing treatment procedure is performed; and performing a second electropolishing treatment to the stainless steel workpiece, wherein the second electropolishing treatment uses the stainless steel workpiece after the first electropolishing treatment as an anode, and an electrolyte consists of ethanol, sulfuric acid and perchloric acid, and when a constant voltage is set as 12V, the second electropolishing treatment is performed to obtain the stainless steel workpiece after the second electropolishing treatment.

公开(公告)号：US11130152B2

公开(公告)日：2021-09-28

申请号：US16699093

申请日：2019-11-28

申请人： National Chung-Shan Institute of Science and Technology

发明人： Cheng-Jung Ko ,  Jun-Bin Huang ,  Chih-Wei Kuo ,  Dai-Liang Ma ,  Bang-Ying Yu

IPC分类号： B05D1/18 ,  B05D1/02 ,  B05D3/02 ,  C01G35/00 ,  C23C18/02 ,  C23C18/12 ,  B05D3/04

摘要： A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.

公开(公告)号：US20210281366A1

公开(公告)日：2021-09-09

申请号：US16812390

申请日：2020-03-09

申请人： National Chung-Shan Institute of Science and Technology

发明人： Jhih-Lin Li ,  Shao-Yu Lien ,  Chia-Ling Wu ,  Yueh-Jir Wang

IPC分类号： H04L1/18 ,  H04W76/14 ,  H04L5/00 ,  H04L12/841 ,  H04W72/04 ,  H04W72/12

摘要： A method of sidelink communications by a plurality of user equipment (UE) without the control of a base station in a wireless communication system is disclosed. In one embodiment, the UE being a scheduler end is configured to allocate the resources for initial/repeated transmissions and ACK/NACK messages, and also transmit information regarding the allocated resources to both the UEs being a transmitter end and a receiver end. In one embodiment, retransmission is performed when none of the scheduler and transmitter ends has received the ACK message sent by the receiver end, so as to minimize redundant retransmission in consideration of transmission reliability. In one embodiment, retransmission is performed when at least one of the scheduler and transmitters end has received the NACK message sent by the receiver end before the retransmission timer has reached to zero, so as to minimize transmission latency.