Invention Grant
- Patent Title: Methods of forming an apparatus for making semiconductor dieves
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Application No.: US16250778Application Date: 2019-01-17
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Publication No.: US10930548B2Publication Date: 2021-02-23
- Inventor: Shane J. Trapp , Timothy A. Quick , Byeung Chul Kim
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/308 ; H01L21/02 ; H01L21/3065
Abstract:
A method of forming an apparatus comprises conformally forming a spacer material over and between structures overlying a base structure. A liner material is conformally formed on the spacer material. The spacer material is selectively etchable relative to the liner material through exposure to at least one etchant. Portions of the liner material and the spacer material overlying upper surfaces of the structures and upper surfaces of the base structure horizontally between the structures are selectively removed to form spacer structures flanking side surfaces of the structures. An apparatus and an electronic system are also described.
Public/Granted literature
- US20200235004A1 METHODS OF FORMING AN APPARATUS, AND RELATED APPARATUSES AND ELECTRONIC SYSTEMS Public/Granted day:2020-07-23
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