Invention Grant
- Patent Title: Microelectronic devices designed with ultra-high-k dielectric capacitors integrated with package substrates
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Application No.: US16606130Application Date: 2017-06-27
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Publication No.: US10937594B2Publication Date: 2021-03-02
- Inventor: Thomas L. Sounart , Aleksandar Aleksov , Feras Eid , Georgios C. Dogiamis , Johanna M. Swan , Kristof Darmawikarta
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2017/039598 WO 20170627
- International Announcement: WO2019/005021 WO 20190103
- Main IPC: H01G4/14
- IPC: H01G4/14 ; H05K1/02 ; H05K1/03

Abstract:
Embodiments of the invention include a microelectronic device that includes a plurality of organic dielectric layers and a capacitor formed in-situ with at least one organic dielectric layer of the plurality of organic dielectric layers. The capacitor includes first and second conductive electrodes and an ultra-high-k dielectric layer that is positioned between the first and second conductive electrodes.
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