- 专利标题： Semiconductor device
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申请号： US16038196申请日： 2018-07-18
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公开(公告)号： US10937701B2公开(公告)日： 2021-03-02
- 发明人: Feng-Yi Chang , Shih-Fang Tzou , Yu-Cheng Tung , Ming-Feng Kuo , Li-Chiang Chen
- 申请人： UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： TW Hsin-Chu; CN Quanzhou
- 专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu; CN Quanzhou
- 代理商 Winston Hsu
- 优先权： CN201710308679.4 20170504
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8234
摘要：
A semiconductor device includes a first gate structure in a substrate and a second gate structure in the substrate and adjacent to the first gate structure. Preferably, a top surface of the first gate structure and a top surface of the second gate structure are lower than a top surface of the substrate and a number of work function metal layers in the first gate structure and the second gate structure are different.
公开/授权文献
- US20180342425A1 SEMICONDUCTOR DEVICE 公开/授权日：2018-11-29
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