Invention Grant
- Patent Title: Device for compound semiconductor Fin structure
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Application No.: US16447818Application Date: 2019-06-20
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Publication No.: US10937896B2Publication Date: 2021-03-02
- Inventor: Haiyang Zhang , Yan Wang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai; CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai; CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201610379438.4 20160601
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/3065 ; H01L29/06 ; H01L29/10 ; H01L29/161 ; H01L29/20 ; H01L27/092 ; H01L21/84 ; H01L27/12 ; H01L27/108 ; H01L29/417 ; H01L21/8238 ; H01L27/088 ; H01L21/8234
Abstract:
A semiconductor device includes a substrate and a fin structure. The fin structure includes a first semiconductor layer on the substrate, and a stack of one or more semiconductor layer structures. Each of the semiconductor layer structures includes a first insulator layer and a second semiconductor layer on the first insulator layer, the first and second semiconductor layers having a same semiconductor compound.
Public/Granted literature
- US20190305108A1 DEVICE FOR COMPOUND SEMICONDUCTOR FIN STRUCTURE Public/Granted day:2019-10-03
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