- 专利标题: Electron gun and electron microscope
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申请号: US16568110申请日: 2019-09-11
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公开(公告)号: US10943760B2公开(公告)日: 2021-03-09
- 发明人: Yung-Ho Alex Chuang , Yinying Xiao-Li , Edgardo Garcia Berrios , John Fielden , Masayoshi Nagao
- 申请人: KLA Corporation , National Institute of Advanced Industrial Science and Technology
- 申请人地址: US CA Milpitas; JP Tokyo
- 专利权人: KLA Corporation,National Institute of Advanced Industrial Science and Technology
- 当前专利权人: KLA Corporation,National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址: US CA Milpitas; JP Tokyo
- 代理机构: Bever, Hoffman & Harms, LLP
- 主分类号: H01J37/073
- IPC分类号: H01J37/073 ; H01J37/28 ; H01J37/317
摘要:
An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.
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