Electron gun and electron microscope

    公开(公告)号:US12217928B2

    公开(公告)日:2025-02-04

    申请号:US17798092

    申请日:2020-03-25

    Abstract: The electron gun is provided with a first anode electrode and a second anode electrode to generate an acceleration and deceleration electric field. A lens electric field makes it possible to irradiate a sample with an electron beam emitted from a part outside an optical axis of the photoelectric film without being blocked by a differential exhaust diaphragm. A wide range of electron beams off-optical axis can be used even in a high-brightness photocathode that requires high vacuum. As a result, the photoelectric film and the electron gun can be extended in life, can be stabilized, and can be increased in brightness. Further, it is possible to facilitate a control of emitting electron beams from a plurality of positions on the photoelectric film, a timing control of emitting electron beams from a plurality of positions, a condition control of an electron beam in an electron microscope using electron beams.

    CHARGED PARTICLE BEAM DEVICE
    3.
    发明申请

    公开(公告)号:US20240379318A1

    公开(公告)日:2024-11-14

    申请号:US18691071

    申请日:2021-10-19

    Abstract: Provided is a charged particle beam device that can precisely manage a temperature at which a cold field emitter is heated. A charged particle beam device includes: a cold field emitter including a tip having a sharpened distal end, a filament connected to the tip, and an auxiliary electrode covering the filament and having an opening from which the tip protrudes; an extraction electrode to which an extraction voltage for extracting electrons from the cold field emitter is applied; and an acceleration electrode to which an acceleration voltage for accelerating the electrons extracted from the cold field emitter is applied. When the tip and the filament are heated, thermionic electrons emitted from the tip and the filament are collected by the auxiliary electrode to measure a current by applying a positive voltage with respect to the tip to the auxiliary electrode.

    Charged particle source and charged particle beam device

    公开(公告)号:US11990311B2

    公开(公告)日:2024-05-21

    申请号:US18130466

    申请日:2023-04-04

    CPC classification number: H01J37/073 H01J37/28

    Abstract: A charged particle source is provided that exhibits small energy dispersion for charged particle beams emitted under a high angular current density condition and allows stable acquisition of large charged particle currents even for a small light source diameter. The charged particle source has a spherical virtual cathode surface from which charged particles are emitted, and the virtual cathode surface for charged particles emitted from a first position on a tip end surface of an emitter and the virtual cathode surface for charged particles emitted from a second position on the tip end surface of the emitter match each other.

    Electron source and charged particle beam device

    公开(公告)号:US11929230B2

    公开(公告)日:2024-03-12

    申请号:US17601421

    申请日:2019-04-18

    CPC classification number: H01J37/073

    Abstract: A large current electron beam is stably emitted from an electron gun of a charged particle beam device. The electron gun of the charged particle beam device includes: a SE tip 202; a suppressor 303 disposed rearward of a distal end of the SE tip; a cup-shaped extraction electrode 204 including a bottom surface and a cylindrical portion and enclosing the SE tip and the suppressor; and an insulator 208 holding the suppressor and the extraction electrode. A shield electrode 301 of a conductive metal having a cylindrical portion 302 is provided between the suppressor and the cylindrical portion of the extraction electrode. A voltage lower than a voltage of the SE tip is applied to the shield electrode.

    Electron gun, electron gun component, electron beam applicator, and alignment method

    公开(公告)号:US11842879B2

    公开(公告)日:2023-12-12

    申请号:US17996213

    申请日:2021-08-20

    Abstract: Provided are an electron gun, an electron gun component, an electron beam applicator, and an alignment method that can align the emission axis of an electron beam with the optical axis of the electron optical system of the counterpart device even when misalignment of a mounted position of the electron gun being mounted to the counterpart device is larger. The electron gun includes: a light source; a vacuum chamber; a photocathode that emits an electron beam in response to receiving light from the light source; an electrode kit; and an electrode kit drive device, the electrode kit includes a photocathode supporting part, and an anode arranged spaced apart from the photocathode supporting part, the photocathode is placed on the photocathode supporting part, and the electrode kit drive device moves the electrode kit in an X-Y plane, where one direction is defined as an X direction, a direction orthogonal to the X direction is defined as a Y direction, and a plane including the X direction and the Y direction is defined as the X-Y plane.

    Electron beam apparatus
    10.
    发明授权

    公开(公告)号:US11784022B2

    公开(公告)日:2023-10-10

    申请号:US17425872

    申请日:2019-01-28

    Abstract: A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.

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