Invention Grant
- Patent Title: Method for manufacturing a substrate
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Application No.: US15743004Application Date: 2016-07-13
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Publication No.: US10943778B2Publication Date: 2021-03-09
- Inventor: Pascal Guenard , Marcel Broekaart , Thierry Barge
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1501519 20150717
- International Application: PCT/EP2016/066609 WO 20160713
- International Announcement: WO2017/012940 WO 20170126
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L41/312 ; H01L41/083 ; H01L41/187 ; H03H9/02

Abstract:
A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.
Public/Granted literature
- US20190088462A1 METHOD FOR MANUFACTURING A SUBSTRATE Public/Granted day:2019-03-21
Information query
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