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    Method for manufacturing a substrate
    1.
    发明授权
    Method for manufacturing a substrate 有权

    公开(公告)号：US12272540B2

    公开(公告)日：2025-04-08

    申请号：US18470975

    申请日：2023-09-20

    Applicant: Soitec

    Inventor： Pascal Guenard ,  Marcel Broekaart ,  Thierry Barge

    IPC: H01L21/02 ,  H10N30/072 ,  H10N30/50 ,  H10N30/853 ,  H03H9/02

    Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

    Method for manufacturing a substrate
    2.
    发明授权
    Method for manufacturing a substrate 有权

    公开(公告)号：US10943778B2

    公开(公告)日：2021-03-09

    申请号：US15743004

    申请日：2016-07-13

    Applicant: Soitec

    Inventor： Pascal Guenard ,  Marcel Broekaart ,  Thierry Barge

    IPC: H01L21/02 ,  H01L41/312 ,  H01L41/083 ,  H01L41/187 ,  H03H9/02

    Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

    METHOD OF COLLECTIVE MANUFACTURE OF LEDS AND STRUCTURE FOR COLLECTIVE MANUFACTURE OF LEDS
    3.
    发明申请
    METHOD OF COLLECTIVE MANUFACTURE OF LEDS AND STRUCTURE FOR COLLECTIVE MANUFACTURE OF LEDS 审中-公开
    LED集束制造方法及LED集束式制造结构

    公开(公告)号：US20150155331A1

    公开(公告)日：2015-06-04

    申请号：US14409650

    申请日：2013-06-18

    Applicant: Soitec

    Inventor： Pascal Guenard

    IPC: H01L27/15 ,  H01L33/12 ,  H01L33/00 ,  H01L33/62

    CPC classification number: H01L27/153 ,  H01L27/156 ,  H01L31/02008 ,  H01L31/075 ,  H01L31/1892 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/12 ,  H01L33/20 ,  H01L33/385 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  Y02E10/548

    Abstract: The disclosure relates to a method of collective manufacturing of light-emitting diode (LED) devices comprising formation of elemental structures, each comprising an n-type layer, an active layer and a p-type layer, the method comprising: —reduction of the lateral dimensions of part of each elemental LED structure; —formation of a portion of insulating material on the sides of the elemental structures; —formation of n-type electrical contact pads and p-type electrical contact pads; —deposition of a conductive material layer; on the elemental structures and polishing of the conductive material layer; and—bonding by molecular adhesion of a second substrate on the polished surface of the structure.

    Abstract translation: 本公开涉及一种集体制造发光二极管（LED）装置的方法，包括形成元件结构，每个元件结构包括n型层，活性层和p型层，该方法包括： - 还原 每个元件LED结构的一部分的横向尺寸; 在元件结构的侧面上形成绝缘材料的一部分; n型电接触焊盘和p型电接触焊盘的形状; - 导电材料层的沉积; 在导电材料层的元素结构和抛光上; 并且通过第二基底的分子粘附在结构的抛光表面上进行粘合。

    Structured substrate for LEDs with high light extraction
    10.
    发明授权
    Structured substrate for LEDs with high light extraction 有权
    具有高光提取功能的LED的结构化基板

    公开(公告)号：US09412904B2

    公开(公告)日：2016-08-09

    申请号：US14370903

    申请日：2013-01-04

    Applicant: Commissariaat a l'energie atomique et aux ene alt ,  SOITEC

    Inventor： Yohan Desieres ,  Philippe Gilet ,  Pascal Guenard

    IPC: H01L33/58 ,  H01L33/00 ,  H01L33/22 ,  H01L33/10 ,  H01L33/46 ,  G02B5/02 ,  H01L33/32

    CPC classification number: H01L33/22 ,  G02B5/0236 ,  G02B5/0284 ,  H01L33/005 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025 ,  H01L2933/0058

    Abstract: A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.

    Abstract translation: 一种用于对入射光线进行背散射的装置，包括：主机基板; 结构化层; 与主体基板的前表面接触的第一面; 平行于第一面的第二平面; 第一材料和第二材料，其在混合平面中形成至少一个其尺寸在300nm和800nm之间的交替表面，所述混合平面在所述结构化层的第一和第二面之间; 其中所述第一和第二材料的折射率不同，所述结构化层被特定层覆盖，所述特定层由与所述结构化层的第一和第二材料不同的材料制成，并且所述特定层 层是晶体和半导电的。

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