- 专利标题： UV-transparent aluminum nitride single crystal having a diameter of 35 mm to 150 mm and a predefined UV transparency metric at a wavelength of 265 nm
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申请号： US16185830申请日： 2018-11-09
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公开(公告)号： US10954608B2公开(公告)日： 2021-03-23
- 发明人: Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
- 申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
- 申请人地址： US NY Watervliet; US NY Ballston Lake; JP Green Island; US NY Troy; US NY Cohoes; US NY Troy; US NY Latham
- 专利权人： Robert T. Bondokov,Jianfeng Chen,Keisuke Yamaoka,Shichao Wang,Shailaja P. Rao,Takashi Suzuki,Leo J. Schowalter
- 当前专利权人： Robert T. Bondokov,Jianfeng Chen,Keisuke Yamaoka,Shichao Wang,Shailaja P. Rao,Takashi Suzuki,Leo J. Schowalter
- 当前专利权人地址： US NY Watervliet; US NY Ballston Lake; JP Green Island; US NY Troy; US NY Cohoes; US NY Troy; US NY Latham
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： C30B29/40
- IPC分类号： C30B29/40 ; C30B23/06 ; H01L33/00 ; C30B23/00 ; H01S5/30 ; H01S5/343 ; H01S5/02 ; H01L21/02
摘要：
In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
公开/授权文献
- US20190153618A1 LARGE, UV-TRANSPARENT ALUMINUM NITRIDE SINGLE CRYSTALS 公开/授权日：2019-05-23
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