公开(公告)号：US11588299B2

公开(公告)日：2023-02-21

申请号：US16841824

申请日：2020-04-07

申请人： Mellanox Technologies, Ltd.

发明人： Vladimir Iakovlev ,  Yuri Berk ,  Elad Mentovich ,  Tamir Sharkaz

IPC分类号： H01S5/18 ,  H01S5/183 ,  H01S5/042 ,  H01S5/30 ,  H01S5/00 ,  H01S5/20 ,  H01S5/02 ,  H01S5/343 ,  H01L21/18 ,  H01L21/02 ,  H01L21/306 ,  H01L21/283 ,  H01L21/32

摘要： Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.

公开(公告)号：US11557880B2

公开(公告)日：2023-01-17

申请号：US17061305

申请日：2020-10-01

申请人： Skorpios Technologies, Inc.

发明人： John Y. Spann ,  John Zyskind

IPC分类号： H01S5/00 ,  H01S5/30 ,  H01S5/343 ,  H01S5/323

摘要： A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

公开(公告)号：US11476383B2

公开(公告)日：2022-10-18

申请号：US16966775

申请日：2019-01-31

申请人： Cornell University

发明人： Henryk Turski ,  Debdeep Jena ,  Huili Grace Xing ,  Shyam Bharadwaj ,  Alexander Austin Chaney ,  Kazuki Nomoto

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01S5/22 ,  H01S5/30 ,  H01L33/32 ,  H01L33/12

摘要： A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

公开(公告)号：US20220294188A1

公开(公告)日：2022-09-15

申请号：US17829816

申请日：2022-06-01

申请人： Fujikura Ltd. ,  OPTOENEGY Inc.

发明人： Rintaro Morohashi ,  Ryozaburo Nogawa ,  Tomoaki Koui ,  Yumi Yamada

IPC分类号： H01S5/30 ,  H01S5/343 ,  H01S5/20

摘要： A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

公开(公告)号：US11441484B2

公开(公告)日：2022-09-13

申请号：US16820486

申请日：2020-03-16

申请人： SEOUL VIOSYS CO., LTD.

发明人： Seong Joo Park

IPC分类号： H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  F02C7/224 ,  H01S5/042 ,  H01S5/343 ,  F02C7/14 ,  F02C7/232 ,  F02C9/28

摘要： A vertical-cavity surface-emitting laser device including a lower mirror, an upper mirror disposed over the lower mirror, an active region disposed between the lower mirror and the upper mirror, a lower n-type cladding layer disposed between the active region and the lower mirror, an upper n-type cladding layer disposed between the active region and the upper mirror, a heavily doped p-type semiconductor layer disposed between the active region and the upper n-type cladding layer, and a heavily doped n-type semiconductor layer disposed between the heavily doped p-type semiconductor layer and the upper n-type cladding layer to form a tunnel junction with the heavily doped p-type semiconductor layer.

公开(公告)号：US20220199606A1

公开(公告)日：2022-06-23

申请号：US17690952

申请日：2022-03-09

申请人： The Board of Trustees of the University of Illinois ,  X-CELEPRINT LIMITED

发明人： John A. ROGERS ,  Ralph NUZZO ,  Matthew MEITL ,  Etienne MENARD ,  Alfred BACA ,  Michael MOTALA ,  Jong-Hyun AHN ,  Sang-Il PARK ,  Chang-Jae YU ,  Heung Cho KO ,  Mark STOYKOVICH ,  Jongseung YOON

IPC分类号： H01L25/00 ,  H01L27/12 ,  H01L21/00 ,  H01L31/0725 ,  H01L31/18 ,  H01S5/42 ,  H01L25/075 ,  H01L31/054 ,  H01L33/58 ,  H01L33/00 ,  H01S5/02251 ,  H01L31/0525 ,  H01L25/16 ,  H01L33/54 ,  H01L33/56 ,  H01L25/04 ,  H01L31/043 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0288 ,  H01L31/0693 ,  H01L31/167 ,  H01L33/06 ,  H01L33/30 ,  H01L33/48 ,  H01L33/62 ,  H01S5/02 ,  H01S5/343 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0304 ,  H01L33/52 ,  H01S5/183 ,  H01S5/30

摘要： Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

公开(公告)号：US11355899B2

公开(公告)日：2022-06-07

申请号：US17004955

申请日：2020-08-27

申请人： HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

发明人： Bassem Tossoun ,  Di Liang ,  John Paul Strachan

IPC分类号： H01S5/026 ,  H01L45/00 ,  H01S5/042 ,  H01S5/0225 ,  H01S5/30 ,  H01S5/10

摘要： An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.

公开(公告)号：US11329455B2

公开(公告)日：2022-05-10

申请号：US16867666

申请日：2020-05-06

申请人： STMicroelectronics (Crolles 2) SAS

发明人： Mathias Prost ,  Moustafa El Kurdi ,  Philippe Boucaud ,  Frederic Boeuf

IPC分类号： H01S5/227 ,  H01S5/32 ,  H01S5/02 ,  H01S5/042 ,  H01S5/30 ,  H01S5/10 ,  G02B6/136 ,  G02B6/12 ,  G02B6/10

摘要： A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

公开(公告)号：US20220140570A1

公开(公告)日：2022-05-05

申请号：US17432470

申请日：2020-02-05

申请人： STANLEY ELECTRIC CO., LTD.

发明人： Masaru KURAMOTO ,  Seiichiro KOBAYASHI

IPC分类号： H01S5/183 ,  H01S5/343 ,  H01S5/30 ,  H01S5/34

摘要： A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror, the light-emitting structure layer including a light-emitting layer; and a second multilayer film reflecting mirror formed on the light-emitting structure layer, the second multilayer film reflecting mirror constituting a resonator between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The light-emitting structure layer has a high resistance region and a low resistance region having an electrical resistance lower than an electrical resistance of the high resistance region. The low resistance region has a plurality of partial regions arranged into a ring shape while being separated by the high resistance region in a plane of the light-emitting structure layer.

公开(公告)号：US20220120866A1

公开(公告)日：2022-04-21

申请号：US17511715

申请日：2021-10-27

申请人： Sense Photonics, Inc.

发明人： Scott Burroughs ,  Brent Fisher ,  James Carter

IPC分类号： G01S7/481 ,  H01S5/183 ,  H01S5/30 ,  H01S5/00 ,  H01S5/026 ,  G01S17/02 ,  G01S17/89 ,  H01S5/042 ,  H01S5/02253 ,  G01S17/894 ,  F21V5/04 ,  H01S5/40 ,  G02B26/10 ,  H01S5/062 ,  H01S5/42 ,  G01J1/44 ,  H01L31/167 ,  H01L31/18 ,  G02B5/08 ,  H01L25/00 ,  H01S3/02

摘要： A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.