- 专利标题： Programming circuit and programming method of flash memory and flash memory
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申请号： US16252991申请日： 2019-01-21
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公开(公告)号： US10964391B2公开(公告)日： 2021-03-30
- 发明人: Hongsong Ni , Ming Wang
- 申请人： Chengdu Analog Circuit Technology Inc
- 申请人地址： CN Chengdu
- 专利权人： Chengdu Analog Circuit Technology Inc
- 当前专利权人： Chengdu Analog Circuit Technology Inc
- 当前专利权人地址： CN Chengdu
- 代理机构： W&K IP
- 主分类号： G11C16/10
- IPC分类号： G11C16/10 ; G11C16/04 ; H01L27/11526 ; H01L29/788
摘要：
The present invention relates to a programming circuit and a programming method of a flash memory, the programming circuit includes a programming transistor and a storage cell connected in series, a gate of the programming transistor is connected to a word line, a gate of the storage cell is connected to a control gate, one end of the programming transistor is connected to a bit line, the other end of the programming transistor is connected to one end of the storage cell, and the other end of the storage cell is connected to a source line. By programming the flash memory by the programming circuit and method of the present invention, the efficiency of latter stage programming can be improved without increasing channel current, thereby improving the efficiency of the entire programming process, shortening the total programming time, and improving the performance of the flash memory.