Invention Grant
- Patent Title: Semiconductor circuit and operating method for the same
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Application No.: US16154831Application Date: 2018-10-09
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Publication No.: US10971200B2Publication Date: 2021-04-06
- Inventor: Yu-Hsuan Lin , Chao-Hung Wang
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22 ; G06F3/06

Abstract:
A semiconductor circuit and an operating method for the same are provided. The method includes the following steps. A memory circuit is operated during a first timing to obtain a first memory state signal S1. The memory circuit is operated during a second timing after the first timing to obtain a second memory state signal S2. A difference between the first memory state signal S1 and the second memory state signal S2 is calculated to obtain a state difference signal SD. A calculating is performed to obtain an un-compensated output data signal OD relative with an input data signal ID and the second memory state signal S2. The state difference signal SD and the un-compensated output data signal OD are calculated to obtain a compensated output data signal OD′.
Public/Granted literature
- US20200027488A1 SEMICONDUCTOR CIRCUIT AND OPERATING METHOD FOR THE SAME Public/Granted day:2020-01-23
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