Cobalt interconnect structure including noble metal layer

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US10971398B2 Cobalt interconnect structure including noble metal layer 有权

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Patent Title: Cobalt interconnect structure including noble metal layer
Application No.: US16171440

Application Date: 2018-10-26
Publication No.: US10971398B2

Publication Date: 2021-04-06
Inventor: Theodorus E. Standaert , Chih-Chao Yang
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Cantor Colburn LLP
Agent James Nock
Main IPC: H01L23/52
IPC: H01L23/52 ; H01L21/768 ; H01L23/522 ; H01L23/532

Cobalt interconnect structure including noble metal layer

Abstract:

Interconnect structures and processes of fabricating the interconnect structures generally includes partially or completely cobalt filled openings. The cobalt metal is conformally deposited onto a noble metal layer and thermally annealed to reflow the cobalt metal and partially or completely fill the openings.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/52	.用于在处于工作中的器件内部从一个组件向另一个组件通电的装置