A method includes providing a channel region and growing an oxide layer on the channel region. Growing the oxide layer includes introducing a first source gas providing oxygen and introducing a second source gas providing hydrogen. The second source gas being different than the first source gas. The growing the oxide layer is grown by bonding the oxygen to a semiconductor element of the channel region to form the oxide layer and bonding the hydrogen to the semiconductor element of the channel region to form a semiconductor hydride byproduct. A gate dielectric layer and electrode can be formed over the oxide layer.