Invention Grant
- Patent Title: FinFET device with T-shaped fin
-
Application No.: US16730330Application Date: 2019-12-30
-
Publication No.: US10971628B2Publication Date: 2021-04-06
- Inventor: Chun-Neng Lin , Shian-Wei Mao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L29/66 ; H01L21/8238
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes an isolation feature over a substrate and a fin structure protruding from the substrate and partially surrounded by the isolation feature. The fin structure includes a first portion above the isolation feature and having a first width. The fin structure also includes a second portion extending from a top of the first portion and having a second width greater than the first width, so that the fin structure above the isolation feature has a T-shaped profile. The semiconductor device structure also includes a gate structure covering the first portion and the second portion of the fin structure.
Information query
IPC分类:
