Invention Grant
- Patent Title: System based on low-pressure chemical vapor deposition for fabricating perovskite film from organic halide compound and metal halide compound
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Application No.: US15503780Application Date: 2015-08-17
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Publication No.: US10975498B2Publication Date: 2021-04-13
- Inventor: Yabing Qi , Matthew Ryan Leyden
- Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Applicant Address: JP Okinawa
- Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Current Assignee: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
- Current Assignee Address: JP Okinawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- International Application: PCT/JP2015/004078 WO 20150817
- International Announcement: WO2016/027450 WO 20160225
- Main IPC: C30B31/16
- IPC: C30B31/16 ; C23C16/448 ; H01L33/00 ; H01L33/26 ; C23C16/30 ; C30B25/02 ; C30B29/12 ; C30B25/00 ; C30B31/12 ; C23C16/52 ; C30B29/54 ; H01L51/00 ; H01L51/42 ; H01G9/20 ; H01L51/50

Abstract:
A system and method for fabricating a perovskite film is provided, the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units, respectively. The first and second sections correspond substantially to the upstream and downstream of gases, respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit, and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre-deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.
Public/Granted literature
- US20170268128A1 SYSTEM AND METHOD BASED ON LOW-PRESSURE CHEMICAL VAPOR DEPOSITION FOR FABRICATING PEROVSKITE FILM Public/Granted day:2017-09-21
Information query
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