- 专利标题： Avalanche diode and method of manufacturing an avalanche diode
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申请号： US16157876申请日： 2018-10-11
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公开(公告)号： US10978606B2公开(公告)日： 2021-04-13
- 发明人: Laurence Stark
- 申请人： STMicroelectronics (Research & Development) Limited
- 申请人地址： GB Marlow
- 专利权人： STMicroelectronics (Research & Development) Limited
- 当前专利权人： STMicroelectronics (Research & Development) Limited
- 当前专利权人地址： GB Marlow
- 代理机构： Seed IP Law Group LLP
- 优先权： EP17198619 20171026
- 主分类号： H01L31/107
- IPC分类号： H01L31/107 ; H01L31/113 ; H01L31/18 ; H01L31/101 ; H01L31/0352 ; H01L31/02 ; H01L27/146 ; H01L29/06
摘要：
The present disclosure relates to an avalanche diode including at least one PN junction; at least one depletion structure located adjacent to the PN junction and configured to form a depletion region; and at least two electrodes to polarize the at least one PN junction.
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