- 专利标题: Light-emitting device
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申请号: US15672452申请日: 2017-08-09
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公开(公告)号: US10978613B2公开(公告)日: 2021-04-13
- 发明人: Mitsuaki Osame , Aya Anzai , Jun Koyama , Makoto Udagawa , Masahiko Hayakawa , Shunpei Yamazaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi
- 代理机构: Fish & Richardson P.C.
- 优先权: JPJP2002-010848 20020118,JPJP2002-025065 20020201
- 主分类号: H01L27/32
- IPC分类号: H01L27/32 ; H01L33/08 ; G09G3/3233
摘要:
A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.
公开/授权文献
- US20180026153A1 LIGHT-EMITTING DEVICE 公开/授权日:2018-01-25
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