Invention Grant
- Patent Title: Light-emitting device
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Application No.: US15672452Application Date: 2017-08-09
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Publication No.: US10978613B2Publication Date: 2021-04-13
- Inventor: Mitsuaki Osame , Aya Anzai , Jun Koyama , Makoto Udagawa , Masahiko Hayakawa , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JPJP2002-010848 20020118,JPJP2002-025065 20020201
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L33/08 ; G09G3/3233

Abstract:
A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.
Public/Granted literature
- US20180026153A1 LIGHT-EMITTING DEVICE Public/Granted day:2018-01-25
Information query
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