Invention Grant
- Patent Title: Low impedance VCSELs
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Application No.: US16718523Application Date: 2019-12-18
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Publication No.: US10978854B2Publication Date: 2021-04-13
- Inventor: Sagi Mathai , Michael Renne Ty Tan , Wayne Victor Sorin
- Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Applicant Address: US TX Houston
- Assignee: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Current Assignee: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
- Current Assignee Address: US TX Houston
- Agency: Hewlett Packard Enterprise Patent Department
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/183 ; H01S5/042 ; H01S5/187 ; H01S5/343

Abstract:
In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer and a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.
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