Invention Grant
- Patent Title: Interconnection structure with anti-adhesion layer
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Application No.: US14984568Application Date: 2015-12-30
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Publication No.: US10985055B2Publication Date: 2021-04-20
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/528 ; H01L23/485

Abstract:
An interconnection structure includes a non-insulator structure, a liner layer, a dielectric structure, a conductive structure and an anti-adhesion layer. The liner layer is present on the non-insulator structure and has an opening therein. The dielectric structure is present on the liner layer. The dielectric structure includes a via opening therein. The via opening has a sidewall. The conductive structure is present in the via opening of the dielectric structure and electrically connected to the non-insulator structure through the opening of the liner layer. The anti-adhesion layer is present between the sidewall of the via opening of the dielectric structure and the conductive structure.
Public/Granted literature
- US20170194199A1 INTERCONNECTION STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2017-07-06
Information query
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