Invention Grant
- Patent Title: Fins for metal oxide semiconductor device structures
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Application No.: US15470832Application Date: 2017-03-27
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Publication No.: US10985184B2Publication Date: 2021-04-20
- Inventor: Martin D. Giles , Tahir Ghani
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/12 ; H01L29/423 ; H01L29/66 ; H01L21/8238 ; H01L21/84 ; H01L27/092 ; H01L29/165 ; H01L21/02
Abstract:
Embodiments of the present disclosure relate to non-planar semiconductor device structures having fins. In one embodiment, a semiconductor device includes a substrate, silicon fins positioned on the substrate, and a germanium layer that is epitaxially grown on an upper region of the silicon fins with the silicon fins and the germanium layer forming a body of the semiconductor device.
Public/Granted literature
- US20170200744A1 METHODS FOR FORMING FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2017-07-13
Information query
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