- 专利标题： MOSFET with selective dopant deactivation underneath gate
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申请号： US16202796申请日： 2018-11-28
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公开(公告)号： US10985246B2公开(公告)日： 2021-04-20
- 发明人: Dhanyakumar Mahaveer Sathaiya , Kai-Chieh Yang , Wei-Hao Wu , Ken-Ichi Goto , Zhiqiang Wu , Yuan-Chen Sun
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hauptman Ham, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/10 ; H01L29/78 ; H01L29/16 ; H01L21/265
摘要：
A semiconductor device includes a channel region comprising dopants, a gate structure over the channel region and a deactivated region underneath the gate structure and partially within the channel region. Dopants within the deactivated region are deactivated. The deactivated region includes carbon. The deactivated region is physically separated from a top surface of a substrate by a portion of the substrate that is free of carbon.
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