公开(公告)号：US11164864B2

公开(公告)日：2021-11-02

申请号：US16047974

申请日：2018-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yee-Chia Yeo ,  Ling-Yen Yeh ,  Yuan-Chen Sun

IPC分类号： H01L29/66 ,  H01L27/088 ,  H01L21/02 ,  H01L29/24 ,  H01L21/8256 ,  H01L29/78

摘要： A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.

公开(公告)号：US11063128B2

公开(公告)日：2021-07-13

申请号：US16222956

申请日：2018-12-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yee-Chia Yeo ,  Carlos H. Diaz ,  Chih-Hao Wang ,  Ling-Yen Yeh ,  Yuan-Chen Sun

IPC分类号： H01L29/417 ,  H01L29/78 ,  H01L23/535 ,  H01L29/04 ,  H01L29/167 ,  H01L29/201 ,  H01L29/66 ,  H01L21/306 ,  H01L29/10

摘要： A semiconductor device includes a fin having a first semiconductor material, the fin having a source/drain (S/D) region and a channel region, the S/D region providing a top surface and two sidewall surfaces; an isolation structure surrounding a bottom portion of the fin, wherein the S/D region of the fin above the isolation structure has a step profile in each of the two sidewall surfaces; a semiconductor film over the S/D region and having a doped second semiconductor material, the semiconductor film providing a top surface and two sidewall surfaces over the top and two sidewall surfaces of the fin respectively, wherein the doped second semiconductor material is different from the first semiconductor material; and a metal contact over the top and two sidewall surfaces of the semiconductor film and operable to electrically communicate with the S/D region.

公开(公告)号：US12068374B2

公开(公告)日：2024-08-20

申请号：US17229206

申请日：2021-04-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Dhanyakumar Mahaveer Sathaiya ,  Kai-Chieh Yang ,  Ken-Ichi Goto ,  Wei-Hao Wu ,  Yuan-Chen Sun ,  Zhiqiang Wu

IPC分类号： H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/1041 ,  H01L29/1045 ,  H01L29/1608 ,  H01L29/66537 ,  H01L29/66651 ,  H01L29/7833 ,  H01L21/26506 ,  H01L21/2658 ,  H01L29/66545

摘要： A method of fabricating a device on a substrate includes doping a channel region of the device with dopants. The method further includes growing an undoped epitaxial layer over the channel region, wherein growing the undoped epitaxial layer comprises deactivating dopants in the channel region to form a deactivated region. The method further includes forming a gate structure over the deactivated region.

公开(公告)号：US10157985B2

公开(公告)日：2018-12-18

申请号：US14855477

申请日：2015-09-16

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Dhanyakumar Mahaveer Sathaiya ,  Kai-Chieh Yang ,  Wei-Hao Wu ,  Ken-Ichi Goto ,  Zhiqiang Wu ,  Yuan-Chen Sun

IPC分类号： H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L21/265

摘要： A metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a channel region comprising dopants of a first type. The MOSFET device further includes a gate dielectric over the channel region, and a gate over the gate dielectric. The MOSFET device further includes a source comprising dopants of a second type, and a drain comprising dopants of the second type, wherein the channel region is between the source and the drain. The MOSFET device further includes a deactivated region underneath the gate, wherein dopants within the deactivated region are deactivated.

公开(公告)号：US20160276343A1

公开(公告)日：2016-09-22

申请号：US15001909

申请日：2016-01-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yee-Chia Yeo ,  Ling-Yen Yeh ,  Yuan-Chen Sun

IPC分类号： H01L27/088 ,  H01L21/461 ,  H01L29/24 ,  H01L21/8256 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L27/0886 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02658 ,  H01L21/8256 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/785

摘要： A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.

摘要翻译： 提供了形成有过渡金属二硫属化物材料的晶体管。 使用直接沉积工艺形成过渡金属二硫属元素材料，并将其图案化成一个或多个翅片。 栅极电介质和栅电极形成在一个或多个鳍上。 或者，可以使用非过渡金属二硫属化物材料的沉积形成过渡金属二硫属化物材料，然后进行处理以形成过渡金属二硫属化物材料。 另外，使用过渡金属二硫属元素材料的翅片可以形成为具有垂直于衬底的侧壁或者相对于衬底倾斜的侧壁。

公开(公告)号：US20200006337A1

公开(公告)日：2020-01-02

申请号：US16569442

申请日：2019-09-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yee-Chia Yeo ,  Ling-Yen Yeh ,  Yuan-Chen Sun

IPC分类号： H01L27/088 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H01L21/8256 ,  H01L29/78

摘要： A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.

公开(公告)号：US20190123157A1

公开(公告)日：2019-04-25

申请号：US16222956

申请日：2018-12-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yee-Chia Yeo ,  Carlos H. Diaz ,  Chih-Hao Wang ,  Ling-Yen Yeh ,  Yuan-Chen Sun

IPC分类号： H01L29/417 ,  H01L29/78 ,  H01L21/306 ,  H01L29/66 ,  H01L23/535 ,  H01L29/10 ,  H01L29/04 ,  H01L29/167 ,  H01L29/201

摘要： A semiconductor device includes a fin having a first semiconductor material, the fin having a source/drain (S/D) region and a channel region, the S/D region providing a top surface and two sidewall surfaces; an isolation structure surrounding a bottom portion of the fin, wherein the S/D region of the fin above the isolation structure has a step profile in each of the two sidewall surfaces; a semiconductor film over the S/D region and having a doped second semiconductor material, the semiconductor film providing a top surface and two sidewall surfaces over the top and two sidewall surfaces of the fin respectively, wherein the doped second semiconductor material is different from the first semiconductor material; and a metal contact over the top and two sidewall surfaces of the semiconductor film and operable to electrically communicate with the S/D region.

公开(公告)号：US20170194442A1

公开(公告)日：2017-07-06

申请号：US15447967

申请日：2017-03-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yee-Chia Yeo ,  Carlos H. Diaz ,  Chih-Hao Wang ,  Ling-Yen Yeh ,  Yuan-Chen Sun

IPC分类号： H01L29/417 ,  H01L29/78 ,  H01L29/04 ,  H01L29/167 ,  H01L29/201 ,  H01L29/66 ,  H01L23/535

CPC分类号： H01L29/41791 ,  H01L21/30604 ,  H01L23/535 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/167 ,  H01L29/201 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785

摘要： A semiconductor device includes a fin having a first semiconductor material. The fin includes a source/drain (S/D) region and a channel region. The S/D region provides a top surface and two sidewall surfaces. A width of the S/D region is smaller than a width of the channel region. The semiconductor device further includes a semiconductor film over the S/D region and having a doped second semiconductor material that is different from the first semiconductor material. The semiconductor film provides a top surface and two sidewall surfaces over the top and two sidewall surfaces of the S/D region respectively. The semiconductor device further includes a metal contact over the top and two sidewall surfaces of the semiconductor film and operable to electrically communicate with the S/D region.

公开(公告)号：US10164033B2

公开(公告)日：2018-12-25

申请号：US15447967

申请日：2017-03-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yee-Chia Yeo ,  Carlos H. Diaz ,  Chih-Hao Wang ,  Ling-Yen Yeh ,  Yuan-Chen Sun

IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L23/535 ,  H01L29/04 ,  H01L29/167 ,  H01L29/201 ,  H01L29/66 ,  H01L21/306 ,  H01L29/10

摘要： A semiconductor device includes a fin having a first semiconductor material. The fin includes a source/drain (S/D) region and a channel region. The S/D region provides a top surface and two sidewall surfaces. A width of the S/D region is smaller than a width of the channel region. The semiconductor device further includes a semiconductor film over the S/D region and having a doped second semiconductor material that is different from the first semiconductor material. The semiconductor film provides a top surface and two sidewall surfaces over the top and two sidewall surfaces of the S/D region respectively. The semiconductor device further includes a metal contact over the top and two sidewall surfaces of the semiconductor film and operable to electrically communicate with the S/D region.

公开(公告)号：US20180350806A1

公开(公告)日：2018-12-06

申请号：US16047974

申请日：2018-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yee-Chia Yeo ,  Ling-Yen Yeh ,  Yuan-Chen Sun

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L21/02 ,  H01L21/8256 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L27/0886 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02658 ,  H01L21/8256 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/785

摘要： A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.