- Patent Title: Two-dimensional electron gas (2DEG)-confined devices and methods
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Application No.: US16376468Application Date: 2019-04-05
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Publication No.: US10985269B2Publication Date: 2021-04-20
- Inventor: Alessandro Paolo Bramanti , Alberto Pagani
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed Intellectual Property Law Group LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/10 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H03K17/687 ; H01L29/205 ; H01L29/20 ; H01L21/02 ; H01L27/06

Abstract:
Embodiments are directed to two-dimensional electron gas (2DEG)-confined 2DEG devices and methods. One such device includes a substrate and a heterostructure on the substrate. The heterostructure includes a first semiconductor layer, a second semiconductor layer, and a 2DEG layer between the first and second semiconductor layers. The device further includes a 2DEG device having a conduction channel in the 2DEG layer. An isolation electrode overlies the heterostructure and at least partially surrounds a periphery of the 2DEG device. The isolation electrode, in use, interrupts the 2DEG layer in response to an applied voltage.
Public/Granted literature
- US20200321456A1 TWO-DIMENSIONAL ELECTRON GAS (2DEG)-CONFINED DEVICES AND METHODS Public/Granted day:2020-10-08
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