Invention Grant
- Patent Title: Magneto-resistive structured device having spontaneously generated in-plane closed flux magnetization pattern
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Application No.: US14141660Application Date: 2013-12-27
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Publication No.: US10989769B2Publication Date: 2021-04-27
- Inventor: Juergen Zimmer , Armin Satz , Wolfgang Raberg , Hubert Brueckl , Dieter Suess
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Schiff Hardin LLP
- Main IPC: G01R33/09
- IPC: G01R33/09
Abstract:
A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.
Public/Granted literature
- US20150185297A1 DEVICE, MAGNETIC SENSOR DEVICE AND METHOD Public/Granted day:2015-07-02
Information query
