公开(公告)号：US20150185297A1

公开(公告)日：2015-07-02

申请号：US14141660

申请日：2013-12-27

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Armin Satz ,  Wolfgang Raberg ,  Hubert Brueckl ,  Dieter Suess

IPC: G01R33/09

CPC classification number: G01R33/093 ,  G01R33/095 ,  G01R33/096 ,  G01R33/098

Abstract: A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.

Abstract translation: 根据实施例的装置可以包括磁阻结构，其包括具有自发生成的平面内磁通磁化模式的磁性自由层和具有非闭合磁通磁化模式的磁性参考层。

公开(公告)号：US10585148B2

公开(公告)日：2020-03-10

申请号：US15375995

申请日：2016-12-12

Applicant: Infineon Technologies AG

Inventor： Anton Bachleitner Hofmann ,  Hubert Brueckl ,  Klemens Pruegl ,  Wolfgang Raberg ,  Armin Satz ,  Dieter Suess ,  Tobias Wurft

IPC: G01R33/00 ,  G01R33/09 ,  H01L43/02 ,  H01L43/08

Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.

公开(公告)号：US10989769B2

公开(公告)日：2021-04-27

申请号：US14141660

申请日：2013-12-27

Applicant: Infineon Technologies AG

Inventor： Juergen Zimmer ,  Armin Satz ,  Wolfgang Raberg ,  Hubert Brueckl ,  Dieter Suess

IPC: G01R33/09

Abstract: A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.

公开(公告)号：US10571527B2

公开(公告)日：2020-02-25

申请号：US15602923

申请日：2017-05-23

Applicant: Infineon Technologies AG

Inventor： Dieter Suess ,  Hubert Brueckl ,  Klemens Pruegl ,  Wolfgang Raberg ,  Armin Satz

IPC: G01R33/00 ,  G01R33/09

Abstract: The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.

公开(公告)号：US20180003776A1

公开(公告)日：2018-01-04

申请号：US15602923

申请日：2017-05-23

Applicant: Infineon Technologies AG

Inventor： Dieter Suess ,  Hubert Brueckl ,  Klemens Pruegl ,  Wolfgang Raberg ,  Armin Satz

IPC: G01R33/00 ,  G01R33/09

CPC classification number: G01R33/0011 ,  G01R33/093 ,  G01R33/098

Abstract: The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.