Invention Grant
- Patent Title: P-type metal-oxide-semiconductor (PMOS) low drop-out (LDO) regulator
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Application No.: US16561839Application Date: 2019-09-05
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Publication No.: US10990117B2Publication Date: 2021-04-27
- Inventor: Yue Chao , Marco Zanuso , Rajagopalan Rangarajan , Yiwu Tang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson & Sheridan, LLP
- Main IPC: G05F1/575
- IPC: G05F1/575 ; G05F1/595

Abstract:
Certain aspects of the present disclosure provide a low drop-out (LDO) regulator. The LDO regulator generally includes a first p-type metal-oxide-semiconductor transistor (PMOS) having a drain coupled to an output node of the LDO regulator, a first amplifier having an input coupled to a reference voltage node and an output coupled to a gate of the first PMOS transistor, a second PMOS transistor having a source coupled to the output node, and a second amplifier having an input coupled to the output node and an output coupled to a gate of the second PMOS transistor.
Public/Granted literature
- US20210072778A1 P-TYPE METAL-OXIDE-SEMICONDUCTOR (PMOS) LOW DROP-OUT (LDO) REGULATOR Public/Granted day:2021-03-11
Information query
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