- Patent Title: Reference voltage generation circuit, power-on detection circuit, and semiconductor device for preventing internal circuit from operating incorrectly at low voltage
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Application No.: US16784663Application Date: 2020-02-07
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Publication No.: US10990119B2Publication Date: 2021-04-27
- Inventor: Hiroki Murakami
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: JPJP2019-020246 20190207
- Main IPC: G05F3/20
- IPC: G05F3/20 ; G11C16/04 ; G11C16/26 ; G11C16/30

Abstract:
A reference voltage generation circuit of the invention includes: PMOS transistors P1 and P2 configured to provide current sources with same current to a first current path and a second current path; a bipolar transistor Q1 connected to the PMOS transistors P1 on the first current path; a bipolar transistor Q2 connected to the PMOS transistors P2 on the second current path; a differential amplifier AMP controlling the gates of the PMOS transistors P1 and P2, such that a voltage of a node VN and a voltage of a node VP are equal; an output node BGR outputting a reference voltage Vref; and a reference voltage guarantee portion 130 outputting a detecting signal BGRDET when a differences between the voltage of the node VN and the voltage of the node VP is maintained below a determined value.
Public/Granted literature
- US20200257324A1 REFERENCE VOLTAGE GENERATION CIRCUIT, POWER-ON DETECTION CIRCUIT, AND SEMICONDUCTOR DEVICE Public/Granted day:2020-08-13
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