A plasma processing device including a chamber, a plurality of dielectric windows covering a top portion of the chamber, a lid frame supporting the dielectric windows on a same plane, a plurality of supporting bars supporting a top portion of the lid frame, and a plurality of antennas positioned above the dielectric windows, in which the antennas include a first antenna positioned inside an area defined by the supporting bars and having a loop form, and a second antenna positioned outside the area defined by the supporting bars and having a loop form, and a first current direction in the first antenna and a second current direction in the second antenna are the same as each other.