Invention Grant
- Patent Title: Method of fabricating a semiconductor device using an adhesive layer
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Application No.: US16657708Application Date: 2019-10-18
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Publication No.: US10991597B2Publication Date: 2021-04-27
- Inventor: Kyung-Hak Lee , Jaeyong Park , Jun-su Lim , Sungil Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2019-0032017 20190320
- Main IPC: H01L21/463
- IPC: H01L21/463 ; H01L21/683 ; H01L21/56 ; H01L21/48 ; H01L21/52 ; H01L23/48 ; H01L25/065 ; H01L23/538 ; H01L25/00
Abstract:
A method of fabricating a semiconductor device is provided in which an adhesive layer is disposed on a first surface of a first semiconductor substrate. A carrier substrate is provided on the first surface of the first semiconductor substrate, and the carrier substrate is separated from a surface of the adhesive layer while the adhesive layer is still attached to the first surface of the first semiconductor substrate.
Public/Granted literature
- US20200303209A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING AN ADHESIVE LAYER Public/Granted day:2020-09-24
Information query
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